DTA044EM Specs and Replacement
Type Designator: DTA044EM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
DTA044EM Substitution
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DTA044EM datasheet
-100mA/-50V Digital transistors(with built-in resistors) DTA044EM / DTA044EEB / DTA044EUB Features Dimensions (Unit mm) 1) Built-in bias resistors enable the configuration of VMT3 an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the i... See More ⇒
dta044teb dta044tm dta044tub.pdf ![]()
DTA044T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCEO -50V IC -60mA R1 47k DTA044TM DTA044TEB (SC-105AA) (SC-89) UMT3F lFeatures l 1) Built-In Biasing Resistor 2) Built-in bias resistors enable ... See More ⇒
-100mA/-50V Digital transistors(with built-in resistors) DTA044TM / DTA044TEB / DTA044TUB Features Dimensions (Unit mm) 1) Built-in input resistor enables the direct control of base terminal VMT3 by input voltage without external resistor. (See Inner circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the... See More ⇒
Detailed specifications: DTA024EUB, DTA043EEB, DTA043EM, DTA043EUB, DTA043ZEB, DTA043ZM, DTA043ZUB, DTA044EEB, 2SA1943, DTA044EUB, DTA113ZE, DTA114EEB, DTA114EM, DTA114EUB, DTA114WE, DTA114YEB, DTA114YM
Keywords - DTA044EM pdf specs
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