DTA115EM Datasheet, Equivalent, Cross Reference Search
Type Designator: DTA115EM
SMD Transistor Code: 19
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 40
V
Maximum Collector Current |Ic max|: 0.07
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: SC-105AA
VMT3
SOT723
DTA115EM Transistor Equivalent Substitute - Cross-Reference Search
DTA115EM Datasheet (PDF)
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DTA115E seriesDatasheetPNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-723 SOT-416FLVCC-50VIC(MAX.)-100mA R1100kDTA115EM DTA115EEBR2 (VMT3) (EMT3F)100k SOT-416 SOT-323FLlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the con
pdta115emb.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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DTA115E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R1100kDTA115EM DTA115EEBR2 (SC-105AA) (SC-89)100k EMT3 UMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuratio
dta115em3.pdf
MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains
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DTA114EM3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLDTA114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MJD45H11T4-A
History: MJD45H11T4-A
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