DTB513ZM Datasheet, Equivalent, Cross Reference Search
Type Designator: DTB513ZM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA
VMT3
SOT723
DTB513ZM Transistor Equivalent Substitute - Cross-Reference Search
DTB513ZM Datasheet (PDF)
dtb513ze-zm dtb513ze.pdf
DTB513ZE / DTB513ZMTransistors-500mA / -12V Low VCE(sat) Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB513ZE1.6 0.70.3 0.55 Feature ( )31) VCE (sat) is lower than conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
