DTB513ZM Specs and Replacement
Type Designator: DTB513ZM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
DTB513ZM Substitution
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DTB513ZM datasheet
DTB513ZE / DTB513ZM Transistors -500mA / -12V Low VCE(sat) Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB513ZE 1.6 0.7 0.3 0.55 Feature ( ) 3 1) VCE (sat) is lower than conventional products. ( ) ( ) 2 1 2) Built-in bias resistors enable the configuration of an 0.2 0.2 0.15 (1) GND... See More ⇒
Detailed specifications: DTA144EEB, DTA144EM, DTA144EUB, DTA144WE, DTB113ZK, DTB123YK, DTB123YU, DTB513ZE, A1013, DTB523YE, DTB523YM, DTB543EE, DTB543EM, DTB543XE, DTB543XM, DTB543ZE, DTB543ZM
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