All Transistors. DTB513ZM Datasheet

 

DTB513ZM Datasheet and Replacement


   Type Designator: DTB513ZM
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SC-105AA VMT3 SOT723
 

 DTB513ZM Substitution

   - BJT ⓘ Cross-Reference Search

   

DTB513ZM Datasheet (PDF)

 7.1. Size:69K  rohm
 dtb513ze-zm dtb513ze.pdf pdf_icon

DTB513ZM

DTB513ZE / DTB513ZMTransistors-500mA / -12V Low VCE(sat) Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB513ZE1.6 0.70.3 0.55 Feature ( )31) VCE (sat) is lower than conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DN030E | NSS20500UW3TBG | GC527 | HA21H | H8550S | RT1N144C | MPQ2483

Keywords - DTB513ZM transistor datasheet

 DTB513ZM cross reference
 DTB513ZM equivalent finder
 DTB513ZM lookup
 DTB513ZM substitution
 DTB513ZM replacement

 

 
Back to Top

 


 
.