2N5851 Specs and Replacement
Type Designator: 2N5851
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO72
2N5851 Substitution
- BJT ⓘ Cross-Reference Search
2N5851 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N5845, 2N5845A, 2N5846, 2N5847, 2N5848, 2N5849, 2N585, 2N5850-2, S9014, 2N5852, 2N5853, 2N5854, 2N5855, 2N5856, 2N5857, 2N5858, 2N5859
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