DTB723YM Specs and Replacement
Type Designator: DTB723YM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
DTB723YM Substitution
- BJT ⓘ Cross-Reference Search
DTB723YM datasheet
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB723YE / DTB723YM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB723YE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 an inverter circuit without connecting external input r... See More ⇒
Detailed specifications: DTB543EM, DTB543XE, DTB543XM, DTB543ZE, DTB543ZM, DTB713ZE, DTB713ZM, DTB723YE, 2SD669A, DTB743EE, DTB743EM, DTB743XE, DTB743XM, DTB743ZE, DTB743ZM, DTC014EEB, DTC014EM
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