DTB743EE Specs and Replacement
Type Designator: DTB743EE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 115
Package: EMT3
DTB743EE Substitution
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DTB743EE datasheet
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743EE / DTB743EM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB743EE 1.6 0.7 0.55 0.3 Feature ( ) 3 1. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit ( ) ( ) 2 1 without connecting external i... See More ⇒
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB743ZE 1.6 0.7 0.55 0.3 ( ) 3 Feature ( ) ( ) 2 1 1) VCE(sat) is lower than conventional products. 0.2 0.2 0.15 (1) GND 0.5 0.5 2) Built-in bias resistors enable the configuration of (2) IN 1.0 ... See More ⇒
DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743XE / DTB743XM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB743XE 1.6 0.7 0.3 0.55 Feature ( ) 3 1) VCE(sat) is lower than the conventional products. ( ) ( ) 2 1 0.2 0.2 2) Built-in bias resistors enable the configuration of an 0.15 ... See More ⇒
Detailed specifications: DTB543XE, DTB543XM, DTB543ZE, DTB543ZM, DTB713ZE, DTB713ZM, DTB723YE, DTB723YM, TIP2955, DTB743EM, DTB743XE, DTB743XM, DTB743ZE, DTB743ZM, DTC014EEB, DTC014EM, DTC014EUB
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