DTD743EE Specs and Replacement
Type Designator: DTD743EE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 115
Package: EMT3
DTD743EE Substitution
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DTD743EE datasheet
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD723YE 1.6 0.7 0.55 0.3 ( ) 3 Feature ( ) ( ) 2 1 0.2 0.2 1. VCE (sat) is lower than the conventional products. 0.15 (1) GND 0.5 0.5 2. Built-in bias resistors enable the configuration of (2) IN 1.0 EMT3 ... See More ⇒
DTD743ZE / DTD743ZM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743ZE / DTD743ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD743ZE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE(sat) is lower than conventional products. ( ) ( ) 2 1 2) Built-in bias resistors enable the configuration of an 0.2 0.2 0.15 (1) ... See More ⇒
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743XE / DTD743XM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD743XE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE(sat) is lower than the conventional products. ( ) ( ) 2 1 2) Built-in bias resistors enable the configuration of an 0.2 0.2 0.15 (1) GND 0.5 0.5 inverter cir... See More ⇒
Detailed specifications: DTD543XE, DTD543XM, DTD543ZE, DTD543ZM, DTD713ZE, DTD713ZM, DTD723YE, DTD723YM, S9013, DTD743EM, DTD743XE, DTD743XM, DTD743ZE, DTD743ZM, DTDG23YP, KT209B1, KT209V1
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History: 2N1367 | 2SA1658
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