All Transistors. 2N5868 Datasheet

 

2N5868 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5868
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 87 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 2N5868 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5868 Datasheet (PDF)

 ..1. Size:118K  inchange semiconductor
2n5867 2n5868.pdf

2N5868
2N5868

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.1. Size:468K  rca
2n586.pdf

2N5868

 9.2. Size:11K  semelab
2n5864.pdf

2N5868

2N5864Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 70V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 9.3. Size:11K  semelab
2n5867.pdf

2N5868

2N5867Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.4. Size:118K  inchange semiconductor
2n5869 2n5870.pdf

2N5868
2N5868

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

Datasheet: 2N5859 , 2N586 , 2N5860 , 2N5861 , 2N5862 , 2N5864 , 2N5865 , 2N5867 , D882P , 2N5869 , 2N587 , 2N5870 , 2N5871 , 2N5871-1 , 2N5871-2 , 2N5872 , 2N5872A .

 

 
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