All Transistors. 2TD8307A9 Datasheet

 

2TD8307A9 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2TD8307A9

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 125 °C

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: KT-99-1

2TD8307A9 Transistor Equivalent Substitute - Cross-Reference Search

 

2TD8307A9 Datasheet (PDF)

3.1. 2td8307.pdf Size:203K _integral

2TD8307A9
2TD8307A9

2ТД8307А9 составной биполярный n-p-n транзистор Назначение Кремниевый эпитаксиально–планарный составной биполярный n-p-n транзистор предназначен для использования в усилителях, электронных коммутационных устройст

Datasheet: 2T913B , 2T916A , 2T928A , 2T928B , 2T938A-2 , 2T939A , 2T939A1 , 2TD543A9 , 2SC1740 , 2N6316 , 2N6931 , 2N6932 , 2SA1659A , 2SA1679 , 2SA1718 , 2SA1757 , 2SA1758 .

 


2TD8307A9
  2TD8307A9
  2TD8307A9
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |