2N5875 Datasheet and Replacement

   Type Designator: 2N5875
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

2N5875 Substitution

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2N5875 Datasheet (PDF)

..1. Size:71K central
2n5875 2n5876 2n5877 2n5878.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

..2. Size:117K inchange semiconductor
2n5875 2n5876.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5877 2N5878 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu

0.1. Size:124K mospec
2n5875-78.pdf pdf_icon

AAA

9.1. Size:170K motorola
2n5877 2n5878.pdf pdf_icon

Order this documentMOTOROLAby 2N5877/DSEMICONDUCTOR TECHNICAL DATANPN2N5877Complementary Silicon2N5878High-Power Transistors. . . designed for generalpurpose power amplifier and switching applications.10 AMPERE Low CollectorEmitter Saturation Voltage COMPLEMENTARYVCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 AdcSILICON Low Leakage Current POWER TRANSISTOR

9.2. Size:252K motorola
2n5879 2n5880 2n5881 2n5882.pdf pdf_icon

Order this documentMOTOROLAby 2N5879/DSEMICONDUCTOR TECHNICAL DATAPNP2N5879Complementary Silicon2N5880*High-Power TransistorsNPN. . . designed for generalpurpose power amplifier and switching applications.2N5881 CollectorEmitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882*2N5882 DC Cur

9.3. Size:70K central
2n5879 2n5880 2n5881 2n5882.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.4. Size:11K semelab
2n5870.pdf pdf_icon

2N5870Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

9.5. Size:12K semelab
2n5872.pdf pdf_icon

2N5872Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

9.6. Size:11K semelab
2n5871.pdf pdf_icon

2N5871Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

9.7. Size:11K semelab
2n5873.pdf pdf_icon

2N5873Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

9.8. Size:12K semelab
2n5874.pdf pdf_icon

2N5874Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

9.9. Size:186K bocasemi
2n5879 2n5880 2n5881 2n5882.pdf pdf_icon

ABoca Semiconductor Corp. BSC http://www.bocasemi.comAABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

9.10. Size:117K inchange semiconductor
2n5879 2n5880.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu

9.11. Size:118K inchange semiconductor
2n5869 2n5870.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

9.12. Size:116K inchange semiconductor
2n5873 2n5874.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

9.13. Size:116K inchange semiconductor
2n5871 2n5872.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

9.14. Size:117K inchange semiconductor
2n5877 2n5878.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5877 2N5878 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5875 2N5876 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .