All Transistors. 2SB1069A Datasheet

 

2SB1069A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1069A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220

 2SB1069A Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1069A Datasheet (PDF)

 ..1. Size:160K  jmnic
2sb1069 2sb1069a.pdf

2SB1069A
2SB1069A

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

 ..2. Size:125K  inchange semiconductor
2sb1069 2sb1069a.pdf

2SB1069A
2SB1069A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

 7.1. Size:216K  inchange semiconductor
2sb1069.pdf

2SB1069A
2SB1069A

isc Silicon PNP Power Transistor 2SB1069DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.1. Size:185K  toshiba
2sb1067.pdf

2SB1069A
2SB1069A

 8.2. Size:150K  nec
2sb1068.pdf

2SB1069A
2SB1069A

 8.3. Size:46K  rohm
2sb1066m 2sb1243.pdf

2SB1069A

 8.4. Size:39K  rohm
2sb1064.pdf

2SB1069A

 8.5. Size:39K  rohm
2sb1065.pdf

2SB1069A

 8.6. Size:67K  panasonic
2sb1063.pdf

2SB1069A

 8.7. Size:411K  hitachi
2sb1061.pdf

2SB1069A
2SB1069A

 8.8. Size:57K  no
2sb1062.pdf

2SB1069A

 8.9. Size:78K  secos
2sb1068.pdf

2SB1069A

2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain EmitterCollector High Collector Power Dissipation Base J Complementary of the 2SD1513 A DMillimeter REF.Min

 8.10. Size:159K  jmnic
2sb1063.pdf

2SB1069A
2SB1069A

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-b

 8.11. Size:149K  jmnic
2sb1064.pdf

2SB1069A
2SB1069A

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

 8.12. Size:154K  jmnic
2sb1065.pdf

2SB1069A
2SB1069A

JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

 8.13. Size:219K  inchange semiconductor
2sb1063.pdf

2SB1069A
2SB1069A

isc Silicon PNP Power Transistor 2SB1063DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1499Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

 8.14. Size:217K  inchange semiconductor
2sb1064.pdf

2SB1069A
2SB1069A

isc Silicon PNP Power Transistor 2SB1064DESCRIPTIONLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1505Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 8.15. Size:215K  inchange semiconductor
2sb1065.pdf

2SB1069A
2SB1069A

isc Silicon PNP Power Transistor 2SB1065DESCRIPTION Collector Saturation VoltageLow: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1506Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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