All Transistors. 2SB1565 Datasheet

 

2SB1565 Datasheet and Replacement


   Type Designator: 2SB1565
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220F
 

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2SB1565 Datasheet (PDF)

 ..1. Size:51K  rohm
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2SB1565

2SB1565TransistorsPower Transistor (-60V, -3A)2SB1565 Features External dimensions (Units : mm)1) Low VCE(sat). (Typ.-0.3V at IC/IB = -2/-0.2A)2) Excellent DC current gain characteristics. 10.0 4.53.2 2.8 3) Wide SOA (safe operating area).1.21.30.80.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )(2) Collector Drain(1) (2) (3) (3) Emitter(Source)ROHM : TO-

 ..2. Size:153K  jmnic
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2SB1565

JMnic Product Specification Silicon PNP Power Transistors 2SB1565 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide SOA (safe operating area) Complement to type 2SD2394 PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

 ..3. Size:230K  inchange semiconductor
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2SB1565

isc Silicon PNP Power Transistor 2SB1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE M

 8.1. Size:63K  njs
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2SB1565

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3CD1094 | CSC2240BL | D3851-4 | 2N3906N | BCY77A | BCX58-7 | 2SC4813

Keywords - 2SB1565 transistor datasheet

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