2SB1604A Datasheet and Replacement

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25) SYMBOL PARAMET

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

Power Transistors2SB1604, 2SB1604ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mmFeatures4.6 0.2Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C)2.6 0.11

isc Silicon PNP Power Transistor 2SB1604DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -10ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltag

Power Transistors2SB1605, 2SB1605ASilicon PNP epitaxial planar typeFor low-freauency power amplificationUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1stalled to the heat sin

Power Transistors2SB1607Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD24694.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1s

Power Transistors2SB1606Silicon PNP epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi

Power Transistors2SB1603, 2SB1603ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2Low collector to emitter saturation voltage VCE(sat) 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C) 2.6 0.11.

isc Silicon PNP Power Transistor 2SB1605DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -1.2V(Max.)@I = -3ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-freauen

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

isc Silicon PNP Power Transistor 2SB1607DESCRIPTIONLarge Collector CurrentSatisfactory Linearity of Foward Current Transfer RatioLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -5ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewComplement to Type 2SD2469Minimum Lot-to-Lot variations for

isc Silicon PNP Power Transistor 2SB1606DESCRIPTIONHigh Collector current IcLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -4ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power

isc Silicon PNP Power Transistor 2SB1603DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -2ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage