2SC4557 Datasheet and Replacement

2SC4557Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4557 Symbol Conditions 2SC4557 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 550 IE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4557DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio

Ordering number:EN3187PNP/NPN Epitaxial Planar Silicon Transistor2SA1745/2SC4555Low-Frequency General-PurposeAmplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1745/unit:mm2SC4555-applied set to be made small and slim.2059 Low collector-to-emitter saturation voltage.[2SA1745/2SC4555]B : BaseC : CollectorE : Emitter( )

DATA SHEETSILICON POWER TRANSISTOR2SC4552NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu

DATA SHEETSILICON POWER TRANSISTOR2SC4550NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu

DATA SHEETSILICON POWER TRANSISTOR2SC4554NPN SILICON EPITAXIAL TRANSISTORFOR SWITCHINGThe 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and features large current switching at alow power dissipation.In addition, a high hFE enables alleviation of the driver load.FEATURES High hFE and low VCE(sat):hFE

DATA SHEETSILICON POWER TRANSISTOR2SC4551NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu

DATA SHEETSILICON POWER TRANSISTOR2SC4553NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and features large current switching at alow power dissipation. In addition, a high hFE enables alleviation ofthe driver load.FEATURES High hFE and low VCE(sat)

Power Transistors2SC4559Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh collector to emitter VCEO 3.1 0.1High-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute Maximum Ratings (TC=25C)+0.20.5

SMD Type TransistorsNPN Transistors2SC4555 Features Low collector-to-emitter saturation voltage. Complementary to 2SA17451 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA

2SC4552T2TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V, I = 3A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BAPPLICATIONSDesigned for use as a driver in DC/DC converters andactuators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

SPTECH Product Specificationisc Silicon NPN Power Transistor 2SC4550DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V , I = 1.5A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 4A, I = 0.2A)CE(sat) C BAPPLICATIONSDesigned for use as a driver in DC/DC converters andactuators.ABSOLUTE MAXIMU

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4552DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

isc Silicon NPN Power Transistor 2SC4552DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V, I = 3A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a drive

isc Silicon NPN Power Transistor 2SC4550DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V , I = 1.5A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 4A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a dr

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4559DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PAR