All Transistors. 2SC4595 Datasheet

 

2SC4595 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4595

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Transition Frequency (ft): 120 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220Fa

2SC4595 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4595 Datasheet (PDF)

1.1. 2sc4595.pdf Size:77K _inchange_semiconductor

2SC4595
2SC4595

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4595 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL

4.1. 2sc4598.pdf Size:121K _sanyo

2SC4595
2SC4595

Ordering number:EN3144 NPN Triple Diffused Planar Silicon Transistor 2SC4598 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit:mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4598] cesses for 2SC4598-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC4598

4.2. 2sc4599.pdf Size:128K _sanyo

2SC4595
2SC4595

Ordering number:EN3145 NPN Triple Diffused Planar Silicon Transistor 2SC4599 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit:mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4599] cesses for 2SC4599-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC4599

 4.3. 2sc4597.pdf Size:118K _sanyo

2SC4595
2SC4595

Ordering number:EN3143 NPN Triple Diffused Planar Silicon Transistor 2SC4597 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit:mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4597] cesses for 2SC4597-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC4597

4.4. 2sc4592.pdf Size:48K _hitachi

2SC4595
2SC4595

2SC4592 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4592 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150

 4.5. 2sc4593.pdf Size:24K _hitachi

2SC4595
2SC4595

2SC4593 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4593 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tem

4.6. 2sc4591.pdf Size:24K _hitachi

2SC4595
2SC4595

2SC4591 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4591 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temp

4.7. 2sc4596e.pdf Size:69K _wingshing

2SC4595

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 60 V Collector current (DC) IC -

4.8. 2sc4596.pdf Size:241K _inchange_semiconductor

2SC4595
2SC4595

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757 APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

4.9. 2sc4591.pdf Size:349K _kexin

2SC4595

SMD Type Transistors NPN Transistors 2SC4591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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