2SC5386 PDF and Equivalents Search

 ..1. Size:317K  toshiba

 2sc5386.pdf

2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA... See More ⇒

 ..2. Size:197K  jmnic

 2sc5386.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5386 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symb... See More ⇒

 ..3. Size:181K  inchange semiconductor

 2sc5386.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5386 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV. High speed switching applications. ABSOLU... See More ⇒

 8.1. Size:318K  toshiba

 2sc5387.pdf

2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA... See More ⇒

 8.2. Size:41K  sanyo

 2sc5388.pdf

Ordering number ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features Package Dimensions High speed (Adoption of MBIT process). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5388] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Base 1 2 3 ... See More ⇒

 8.3. Size:46K  panasonic

 2sc5383 2sc5583.pdf

Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra... See More ⇒

 8.4. Size:38K  panasonic

 2sc5380.pdf

Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=... See More ⇒

 8.5. Size:121K  isahaya

 2sc5383.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with... See More ⇒

 8.6. Size:221K  isahaya

 2sc5384.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an... See More ⇒

 8.7. Size:147K  jmnic

 2sc5382.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION With TO-220F package High Voltage High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collec... See More ⇒

 8.8. Size:181K  inchange semiconductor

 2sc5387.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV. High speed switch... See More ⇒

 8.9. Size:175K  inchange semiconductor

 2sc5382.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5382 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 550V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applica... See More ⇒