All Transistors. 2SD2331 Datasheet

 

2SD2331 Datasheet and Replacement


   Type Designator: 2SD2331
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3.5 A
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3PFA
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2SD2331 Datasheet (PDF)

 ..1. Size:189K  inchange semiconductor
 2sd2331.pdf pdf_icon

2SD2331

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2331DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.1. Size:41K  hitachi
 2sd2337.pdf pdf_icon

2SD2331

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:189K  inchange semiconductor
 2sd2333.pdf pdf_icon

2SD2331

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2333DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.3. Size:189K  inchange semiconductor
 2sd2335.pdf pdf_icon

2SD2331

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2335DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA932 | FJAF6810A_J6810A | CTP3551 | 2N5811 | BT2944 | 2SA1477T | STN826

Keywords - 2SD2331 transistor datasheet

 2SD2331 cross reference
 2SD2331 equivalent finder
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