T2141 Specs and Replacement

Type Designator: T2141

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

Package: TO220

 T2141 Substitution

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T2141 datasheet

 ..1. Size:118K  inchange semiconductor

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T2141

NPN T2141 TO-220C 1 2 3 (TC=25 ) VCBO 40... See More ⇒

 0.1. Size:103K  renesas

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T2141

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:217K  inchange semiconductor

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T2141

isc Silicon NPN Darlington Power Transistor T2141F DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain h = 600(Min.)@ I = 3A FE C Low Collector Saturation Voltage V = 1.8V(Max.)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching for dynamotor excitation ... See More ⇒

Detailed specifications: BUH713, BUH715AF, BUL6825, BUT12AX, BUT56AF, BUW13AW, BUW13W, T06, SS8050, T2141F, T2142, T2142F, T25, T30, T30F, T430, 2PD601AW

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