All Transistors. T2142F Datasheet

 

T2142F Datasheet and Replacement


   Type Designator: T2142F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: TO3PML
 

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T2142F Datasheet (PDF)

 ..1. Size:155K  inchange semiconductor
 t2142f.pdf pdf_icon

T2142F

NPN T2142F TO-3PML 1 2 3 (TC=25) VCBO

 9.1. Size:30K  sanyo
 tt2142.pdf pdf_icon

T2142F

Ordering number : ENN7550TT2142NPN Triple Diffused Planar Silicon TransistorTT2142Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[TT2142] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0 2.1

 9.2. Size:127K  renesas
 rej03g1194 hat2142hds.pdf pdf_icon

T2142F

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:242K  aosemi
 aot2142l.pdf pdf_icon

T2142F

AOT2142L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V)

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