2SD2150 Transistor. Datasheet pdf. Equivalent

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2SD2150 Datasheet (PDF)

1.1. 2sd2150.pdf Size:161K _rohm

Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit : mm) 1) Low VCE(sat). 2SD2150 VCE(sat) = 0.2V(Typ.) 4.5+0.2 -0.1 (IC / IB = 2A / 0.1A) 1.5+0.2 1.6�0.1 -0.1 2) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3) 0.4+0.1 -0.05 0.4�0.1 0.5�0.1 Structure 0.4�0.1 1.5�0.1 1.5�0.1 Epitaxial planar type 3.0�0.2 NPN silicon t

1.2. 2sd2150.pdf Size:307K _secos

2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 2 3 A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A E C Collector B C E 2 B D 1 F G Base H K J L 3 Em

1.3. 2sd2150.pdf Size:224K _lge

2SD2150 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-89 3. EMITTER 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Excellent current-to-gain characteristics 2.6 4.25 2.4 3.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dime

1.4. 2sd2150.pdf Size:217K _wietron

2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 20 VEBO V Emitter-Base Voltage 6 Collector Current IC 3 A Collector Power Dissipation PD 500 mW Junction Temperature Tj 150 ?C Tstg -55 to +15

1.5. 2sd2150.pdf Size:1104K _blue-rocket-elect

2SD2150(BR3DG2150T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,典型的电流增益特性,可与 2SB1424(BR3CG1424T)互补。 Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424(BR3CG1424T). 用途 / Applications 用�

1.6. st2sd2150u.pdf Size:637K _semtech

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature

1.7. 2sd2150.pdf Size:1160K _kexin

SMD Type Transistors NPN Transistors 2SD2150 1.70 0.1 ■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |