D882 Datasheet and Replacement

D882NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-1263.20.28.00.22.00.24.140.1FeaturesO2.80.1 O3.20.111.00.21.40.11 2 3o MAXIMUM RATINGS* TA=25 C unless otherwise noted 1.270.1Symbol Parameter Value Units15.30.2VCBO Collector-Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR (NPN) FEATURES 1. EMITTER Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector

D882 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Te

D882(NPN)TO-251 TransistorTO-2511. EMITTER 2. COLLECTOR 3 BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VDimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 3 A PC Collecto

D882 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.631.81.41.42.64.252.43.75Features 0.8 MIN Power dissipation 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage

D882 Transistor(NPN)1. BASE TO-252-2L2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 3 A PC Collector Power Dissip

D882(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Power dissipation 2.5007.4002.9001.1007.800 1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage 40 V 11.0000.300VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Bas

FM120-M WILLASTHRUD882SOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to opt miz

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR ( NPN ) FEATURES Power dissipation 1. EMITTER PCM : 1.25 W ( Tamb=25 ) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 V VEB

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

TO-126 Plastic-Encapsulate TransistorsD882 TRANSISTOR (NPN)TO-126TO-126TO-126TO-126FEATURESPower dissipationMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)2. COLLECTORSymbol Parameter Value UnitsSymbol Parameter Value

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

Product specification NPN Silicon Epitaxial Planar Transistor D882 FEATURES Low saturation voltage. Pb Excellent h linearity and high h . FE FELead-free Less cramping space required due to small and thin Package and reducing the trouble for attachment to a radiator. APPLICATIONS Power amplifier application. SOT-89 ORDERING INFORMATION Type No. Mar

D882NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10 ms) ICP 7 AOTotal

D882 TRANSISTOR (NPN)Equivalent Circuit:1.BASE2.COLLECTOR3.EMITTERFEATURES: power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 3 A Collector Current -Puised ICM 2 A Collector Po

D882Silicon NPN Power Transistor.Features High current output up to 3A Low saturation voltage Complement to 2SB772SQApplicationsPIN1Base PIN 2Collector PIN 3EmitterThese devices are intended for use in audio frequencypower amplifier and low speed switching applications2C1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Sym

D882BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to B772 Large Power Dissipation Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Volta

P D882NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector

2SD882NPN medium power transistorFeatures High current Low saturation voltage Complement to 2SB772Applications1 Voltage regulation23 Relay driver SOT-32 Generic switch(TO-126) Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a NPN transistor manufactured by using planar technology r

November 2007KSD882NPN Epitaxial Silicon TransistorRecommended Applications Audio Frequency Power AmplifierFeatuers Low Speed SwitcingTO-1261 Complement to KSB772. 1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsBVCBO Collector-Base Voltage 40 VBVCEO Collector-Emitter Voltage 30 VBVEBO E

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

2SD882-RMCCMicro Commercial ComponentsTM2SD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD882-YPhone: (818) 701-49332SD882-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORFEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SB772L APPLICATIONS* Audio power amplifier* DC-DC convertor* Voltage regulatorTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollecto

UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3D882SSG-x-AE3-R SOT-2

UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR1 1 FEATURES SOT-223 SOT-89* High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1* Audio power amplifier TO-92* DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing

STD882DNPN Silicon TransistorDescription PIN Connection Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximu

D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G HJMillimeterREF. A DMin. Max.CLASSIFICATION OF hFE A 4.40 4.70BB 4.30 4.70C 12.70 -KD 3.30 3.81E 0.36 0.56Rank R 0 Y GRF 0.36 0.51E C F G 1.27 TYP.60-120 160-320 200-

TSD882 Low Vcesat NPN Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO 60V 2. Collector 3. Base BVCEO 30V IC 3A VCE(SAT) 0.5V @ IC=2A, IB=200mA Features Ordering Information Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Part No. Package Packing Complementary part with TSB772 TSD882CK B0 TO-126 200pcs / Bulk TSD882CK B0G TO-126 200pcs / Bulk

TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSB

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD882TO126 Plastic PackageECBComplementary CSB772Audio Frequency Power Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 .EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Colle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) SOT-89-3L FEATURE Low VCE(sat) Large current capacity 1. BASE 2. COLLECTOR 3. EMITTER MAKING: D882H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURES 1.EMITTER Power dissipation 2.COLLECTOR 3.BASE Equivalent Circuit 1

SEMICONDUCTOR KTD882TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTB772.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 40 V_+F 11.0 0.3G 2.9 MAXVCEOCollec

D882S Transistor(NPN)1.EMITTER TO-922.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters)PC Collector Power Dissipati

WTD772WTD882PNP/NPN Epitaxial Planar TransistorsTO-252/D-PAKP b Lead(Pb)-Free1. BASE2. COLLECTOR33. EMITTER21ABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol PNP/WTD772 UnitNPN/WTD882Collector-E m itter Voltage V 3 0 VdcCE O -3 0Collector-B as e Voltage VCB O -4 04 0 VdcE m itter-B as e Voltage VE B O-5 . 0 5 . 0 VdcCollector Current (DC) IC(DC)-3 . 0 3

2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc

Spec. No. : HE6004HI-SINCERITYIssued Date : 1998.03.15Revised Date : 2005.08.15MICROELECTRONICS CORP.Page No. : 1/5HSD882NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD882 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

Spec. No. : HE6544HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/5HSD882SNPN Epitaxial Planar TransistorDescriptionThe HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relaydriver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd D882 SOT-89 SOT-89 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junct

NPN NPN EPITAXIAL SILICON TRANSISTOR R2SD882 MAIN CHARACTERISTICS Package I 3A CV 30V CEOP (TO-126-FJ) 10W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit

Spec. No. : C848J3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar TransistorBVCEO 50VIC 3ABTD882J3RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli

Spec. No. : C848T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.03.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out

Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 3ABTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p

Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp.Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB772D3 Pb-free package Symbol Outline BTD882D3 TO-126ML B

Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp.Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h

Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3ABTD882I3 RCESAT 125m typ.Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symb

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com D882 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Power dissipation 2. COLLECTOR MARKING: D8821 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO

2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882N(BR3DA882N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage,excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882L(BR3DA882L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882B(BR3DA882BR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SD882D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage,excellent hFE linearity and high hFE. / Applications 3 ,,

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameterCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB882Q L2SB882PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB882Q 82Q 2500/Tape&Reel2,4L2SB882P 82P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD882S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

RD882PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

RD882P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

RD882PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 2222FEATURES 2

SEMICONDUCTORFTD882FTECHNICAL DATA AFTD882F NPN TRANSISTORCHGFEATURES Power dissipation DDKF FDIM MILLIMETERSA 4.70 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) _+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10Symbol Parameter Value Unit E 4.25 MAX_+F 1.50 0.10VCBO Collector-Base Voltage 40 V G 0.40 TYP1. BASEH 1.8 MAX2. COLLE

SEMICONDUCTORFTD882TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTB772. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3CHARACTERISTIC SYMBOL RATING UNIT D 3.20.2E 2.00.2H F 2.80.1VCBOCollector-Base Voltage 40 V IG 3.20.1H 1.270.1VCEO KCollector-Emitter V

SEMICONDUCTORFTD882DTECHNICAL DATAFTD882D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage 40 V J 0 5 0 1L 0 50 0 101 2 3

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type TransistorsNPN Transistors2SD882A1.70 0.1FeaturesExcellent hFE linearity and high hFEhFE = 60 to 400 (VCE = 2 V, IC = 1 A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 70 VCollector to Emitter Voltage VCEO 60 VEmitter to Base Voltage VEBO 6 VCollector Current to Co

CHENMKO ENTERPRISE CO.,LTD2SD882ZGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate). 6.50+0

CHENMKO ENTERPRISE CO.,LTD2SD882GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.*

DC COMPONENTS CO., LTD.DXTD882DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for the output stage of 0.75W audio, voltage regulator, and relay driver.SOT-89.063(1.60).066(1.70)Pinning.055(1.40).059(1.50)1 = Base 2 = Collector 3 = Emitter.102(2.60).167(4.25).095(2.40).159(4.05)1 2 3Absolute Maximu

MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 30V PC 1.0W High switching speed B722 Complementary to B772 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequen

GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments TO-252 Pin Description1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua

D882TRANSISTOR (NPN) FEATURES Power dissipationSOT-89 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit VCBO Collector-Base Voltage 40 V 2. COLLECTORVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V 3. EMITTERIC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

www.msksemi.com2SD882-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC C

www.msksemi.com2SD882Semiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES2Power Dissipation13TO-252-2LMAXIMUM RATINGS (Ta=25 unless otherwise noted)1. BASEUnitSymbolParameter ValueV 40 VCBO Collector-Base Voltage2. COLLECTOR V 30 VCEO Collector-Emitter Voltage3 .EMITTERV 6 VEBO Emitter-Base VoltageI 3 AC Collector Current -

DATA SHEET D882 NPN PLASTIC-ENCAPSULATE TRANSISTORS VOLTAGE 30 V CURRENT 3 A FEATURES COMPLEMENTARY TO B772 COLLECTOR CURRENT IC = 3A E COLLECTOR-EMITTER VOLTAGE VCE = 30V C LEAD FREE AND HALOGEN-FREE SOT-89 E C TO-126 BB MECHANICAL DATA TO-252 TO-251 CASE: SOT-89,TO-126,TO-251,TO-252 TERMINALS: SOLDERABLE PER MIL-STD-202G, METHOD 208 C E E

2SD882SQSilicon NPN Power TransistorFeatures. High current output up to 3A Low saturation voltage Complement to 2SB772SQApplicationsPIN1Base PIN 2Collector PIN 3EmitterThese devices are intended for use in audio frequencypower amplifier and low speed switching applications2C1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter S

D882NPN Transistors Features3 NPN transistor High current output up to 3A2 Low Saturation Voltage Complement to 2SB772 1.Base12.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 6 VCollector

D882SNPN Silicon Power Transistor SOT-23 The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. 1BASE 2EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 A

SOT -89 Plastic-Encapsulate NPN Transistors FEATURES Power dissipation 0.5W MAXIMUM RATINGS (TA=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) 1 of 2 Typical characteristics 2 of 2

D882 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dis

D882 D882 TRANSISTOR (NPN) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W Thermal Resistance fr

D882 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LSOT-89-3LPlastic-Encapsulate Transistors Features Low speed switching Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L Outline Plastic Package Epoxy UL: 94V-0Marking: D882 Mounting Position: Any(TA = 25

D882AO3400SI2305D882NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10

2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10 ms) ICP 7 AOT

2SD882SQSilicon NPN Power TransistorFeatures. High current output up to 3A Low saturation voltage Complement to 2SB772SQPIN1Base PIN 2Collector PIN 3EmitterApplications2CThese devices are intended for use in audio frequencypower amplifier and low speed switching applications1B3EAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter S

2SD882PNP EPITAXIAL SILICON TRANSISTOR3A, 60V, 2SD882 HD882 TO-126 1000Pcs1K10000Pcs10K8822SD882 Series Pin Assignment2SD882PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGE TRANSISTORDESCRIPTIONThe

isc Silicon NPN Power Transistor 2SD882DESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage regulator, DC-DC converter and r

isc Silicon NPN Power Transistor 2SD882U-PDESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.8V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in medium power linearand switching applicationsABSOLUTE MAXIMUM RATINGS(T