All Transistors. D882 Datasheet

 

D882 Datasheet, Equivalent, Cross Reference Search

Type Designator: D882

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

D882 Transistor Equivalent Substitute - Cross-Reference Search

 

D882 Datasheet (PDF)

0.1. 2sd882.pdf Size:110K _st

D882
D882

2SD882NPN medium power transistorFeatures High current Low saturation voltage Complement to 2SB772Applications1 Voltage regulation23 Relay driver SOT-32 Generic switch(TO-126) Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a NPN transistor manufactured by using planar technology r

0.2. ksd882.pdf Size:131K _fairchild_semi

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November 2007KSD882NPN Epitaxial Silicon TransistorRecommended Applications Audio Frequency Power AmplifierFeatuers Low Speed SwitcingTO-1261 Complement to KSB772. 1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsBVCBO Collector-Base Voltage 40 VBVCEO Collector-Emitter Voltage 30 VBVEBO E

 0.3. 2sd882.pdf Size:165K _nec

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0.4. bd882-y.pdf Size:302K _mcc

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D882

BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

 0.5. bd882-gr.pdf Size:302K _mcc

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BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

0.6. 2sd882-gr-r-o-y.pdf Size:305K _mcc

D882
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2SD882-RMCCMicro Commercial ComponentsTM2SD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD882-YPhone: (818) 701-49332SD882-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

0.7. bd882-r.pdf Size:302K _mcc

D882
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BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

0.8. bd882-o.pdf Size:302K _mcc

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BD882-RMCCMicro Commercial ComponentsTMBD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BD882-YPhone: (818) 701-4933Fax: (818) 701-4939BD882-GRFeaturesSilicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer Epoxy meets UL 94 V-0 flammability rating Moisur

0.9. 2sd882s.pdf Size:141K _utc

D882
D882

UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD

0.10. 2sd882l.pdf Size:23K _utc

D882
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UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORFEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SB772L APPLICATIONS* Audio power amplifier* DC-DC convertor* Voltage regulatorTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollecto

0.11. d882ss.pdf Size:154K _utc

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UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2

0.12. 2sd882.pdf Size:210K _utc

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D882

UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2

0.13. std882d.pdf Size:290K _auk

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D882

STD882DNPN Silicon TransistorDescription PIN Connection Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximu

0.14. d882s.pdf Size:209K _secos

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D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G HJMillimeterREF. A DMin. Max.CLASSIFICATION OF hFE A 4.40 4.70BB 4.30 4.70C 12.70 -KD 3.30 3.81E 0.36 0.56Rank R 0 Y GRF 0.36 0.51E C F G 1.27 TYP.60-120 160-320 200-

0.15. d882.pdf Size:271K _secos

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D882NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-1263.20.28.00.22.00.24.140.1FeaturesO2.80.1 O3.20.111.00.21.40.11 2 3o MAXIMUM RATINGS* TA=25 C unless otherwise noted 1.270.1Symbol Parameter Value Units15.30.2VCBO Collector-Base Voltage

0.16. tsd882ck.pdf Size:616K _taiwansemi

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TSD882 Low Vcesat NPN Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO 60V 2. Collector 3. Base BVCEO 30V IC 3A VCE(SAT) 0.5V @ IC=2A, IB=200mA Features Ordering Information Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Part No. Package Packing Complementary part with TSB772 TSD882CK B0 TO-126 200pcs / Bulk TSD882CK B0G TO-126 200pcs / Bulk

0.17. tsd882s.pdf Size:244K _taiwansemi

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TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSB

0.18. csd882 p q.pdf Size:243K _cdil

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD882TO126 Plastic PackageECBComplementary CSB772Audio Frequency Power Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >40

0.19. d882h.pdf Size:129K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) SOT-89-3L FEATURE Low VCE(sat) Large current capacity 1. BASE 2. COLLECTOR 3. EMITTER MAKING: D882H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70

0.20. d882m.pdf Size:592K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 .EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Colle

0.21. ktd882.pdf Size:396K _kec

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SEMICONDUCTOR KTD882TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTB772.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 40 V_+F 11.0 0.3G 2.9 MAXVCEOCollec

0.22. d882.pdf Size:299K _htsemi

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D882 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Te

0.23. d882 to-252-2l.pdf Size:195K _lge

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D882 Transistor(NPN)1. BASE TO-252-2L2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 3 A PC Collector Power Dissip

0.24. d882 sot-89.pdf Size:200K _lge

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D882 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.631.81.41.42.64.252.43.75Features 0.8 MIN Power dissipation 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage

0.25. d882 to-251.pdf Size:230K _lge

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D882(NPN)TO-251 TransistorTO-2511. EMITTER 2. COLLECTOR 3 BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VDimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 3 A PC Collecto

0.26. d882 to-126.pdf Size:254K _lge

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D882(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Power dissipation 2.5007.4002.9001.1007.800 1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage 40 V 11.0000.300VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Bas

0.27. d882s.pdf Size:206K _lge

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D882S Transistor(NPN)1.EMITTER TO-922.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters)PC Collector Power Dissipati

0.28. 2sb772 2sd882.pdf Size:687K _wietron

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2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc

0.29. wtd772 wtd882.pdf Size:266K _wietron

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WTD772WTD882PNP/NPN Epitaxial Planar TransistorsTO-252/D-PAKP b Lead(Pb)-Free1. BASE2. COLLECTOR33. EMITTER21ABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol PNP/WTD772 UnitNPN/WTD882Collector-E m itter Voltage V 3 0 VdcCE O -3 0Collector-B as e Voltage VCB O -4 04 0 VdcE m itter-B as e Voltage VE B O-5 . 0 5 . 0 VdcCollector Current (DC) IC(DC)-3 . 0 3

0.30. d882.pdf Size:475K _willas

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FM120-M WILLASTHRUD882SOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to opt miz

0.31. hsd882.pdf Size:50K _hsmc

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Spec. No. : HE6004HI-SINCERITYIssued Date : 1998.03.15Revised Date : 2005.08.15MICROELECTRONICS CORP.Page No. : 1/5HSD882NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD882 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

0.32. hsd882s.pdf Size:55K _hsmc

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Spec. No. : HE6544HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/5HSD882SNPN Epitaxial Planar TransistorDescriptionThe HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relaydriver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................

0.33. d882.pdf Size:194K _shenzhen

D882
D882

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR ( NPN ) FEATURES Power dissipation 1. EMITTER PCM : 1.25 W ( Tamb=25 ) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 V VEB

0.34. d882-sot89.pdf Size:283K _shenzhen

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D882

Shenzhen Tuofeng Semiconductor Technology Co., Ltd D882 SOT-89 SOT-89 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junct

0.35. btd882j3.pdf Size:302K _cystek

D882
D882

Spec. No. : C848J3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar TransistorBVCEO 50VIC 3ABTD882J3RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli

0.36. btd882d3.pdf Size:177K _cystek

D882
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Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp.Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB772D3 Pb-free package Symbol Outline BTD882D3 TO-126ML B

0.37. btd882sa3.pdf Size:302K _cystek

D882
D882

Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp.Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h

0.38. btd882st3.pdf Size:249K _cystek

D882
D882

Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

0.39. btd882am3.pdf Size:246K _cystek

D882
D882

Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 3ABTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p

0.40. btd882i3.pdf Size:225K _cystek

D882
D882

Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3ABTD882I3 RCESAT 125m typ.Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symb

0.41. btd882t3.pdf Size:320K _cystek

D882
D882

Spec. No. : C848T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.03.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out

0.42. d882 to-252.pdf Size:330K _can-sheng

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D882

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

0.43. d882 to-126.pdf Size:325K _can-sheng

D882
D882

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

0.44. d882-89 3a.pdf Size:185K _can-sheng

D882
D882

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com D882 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Power dissipation 2. COLLECTOR MARKING: D8821 2 3. EMITTER 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO

0.45. d882.pdf Size:481K _can-sheng

D882
D882

TO-126 Plastic-Encapsulate TransistorsD882 TRANSISTOR (NPN)TO-126TO-126TO-126TO-126FEATURESPower dissipationMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)2. COLLECTORSymbol Parameter Value UnitsSymbol Parameter Value

0.46. 2sd882i.pdf Size:804K _blue-rocket-elect

D882
D882

2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.47. 2sd882d.pdf Size:536K _blue-rocket-elect

D882
D882

2SD882D(BR3DA882D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage,excellent hFE linearity and high hFE. / Applications 3 ,,

0.48. 2sd882b.pdf Size:706K _blue-rocket-elect

D882
D882

2SD882B(BR3DA882BR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.49. 2sd882l.pdf Size:617K _blue-rocket-elect

D882
D882

2SD882L(BR3DA882L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.50. 2sd882t.pdf Size:1094K _blue-rocket-elect

D882
D882

2SD882T(BR3DA882T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

0.51. 2sd882n.pdf Size:525K _blue-rocket-elect

D882
D882

2SD882N(BR3DA882N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage,excellent hFE linearity and high hFE. / Applications 3 ,,

0.52. st2sd882u-p.pdf Size:297K _semtech

D882

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

0.53. st2sd882t.pdf Size:386K _semtech

D882
D882

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameterCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

0.54. st2sd882ht.pdf Size:439K _semtech

D882
D882

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

0.55. st2sd882u.pdf Size:535K _semtech

D882
D882

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

0.56. l2sd882q.pdf Size:132K _lrc

D882
D882

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB882Q L2SB882PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB882Q 82Q 2500/Tape&Reel2,4L2SB882P 82P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

0.57. hd882s.pdf Size:26K _shantou-huashan

D882

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD882S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

0.58. d882pc.pdf Size:117K _jdsemi

D882
D882

RD882PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

0.59. d882p.pdf Size:119K _jdsemi

D882
D882

RD882P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

0.60. d882pc 2.pdf Size:118K _jdsemi

D882
D882

RD882PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 2222FEATURES 2

0.61. ftd882.pdf Size:114K _first_silicon

D882
D882

SEMICONDUCTORFTD882TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTB772. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3CHARACTERISTIC SYMBOL RATING UNIT D 3.20.2E 2.00.2H F 2.80.1VCBOCollector-Base Voltage 40 V IG 3.20.1H 1.270.1VCEO KCollector-Emitter V

0.62. ftd882d.pdf Size:371K _first_silicon

D882
D882

SEMICONDUCTORFTD882DTECHNICAL DATAFTD882D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage 40 V J 0 5 0 1L 0 50 0 101 2 3

0.63. ftd882f.pdf Size:289K _first_silicon

D882
D882

SEMICONDUCTORFTD882FTECHNICAL DATA AFTD882F NPN TRANSISTORCHGFEATURES Power dissipation DDKF FDIM MILLIMETERSA 4.70 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) _+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10Symbol Parameter Value Unit E 4.25 MAX_+F 1.50 0.10VCBO Collector-Base Voltage 40 V G 0.40 TYP1. BASEH 1.8 MAX2. COLLE

0.64. 2sd882a.pdf Size:490K _kexin

D882

SMD Type TransistorsNPN Transistors2SD882A1.70 0.1FeaturesExcellent hFE linearity and high hFEhFE = 60 to 400 (VCE = 2 V, IC = 1 A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 70 VCollector to Emitter Voltage VCEO 60 VEmitter to Base Voltage VEBO 6 VCollector Current to Co

0.65. 2sd882-252.pdf Size:52K _kexin

D882

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

0.66. 2sd882.pdf Size:1104K _kexin

D882
D882

SMD Type TransistorsNPN Transistors2SD882Features 1.70 0.1Excellent hFE linearity and high hFEhFE = 60 to 400 (VCE = 2 V, IC = 1 A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 6 VCollector Current to Cont

0.67. 2sd882gp.pdf Size:108K _chenmko

D882
D882

CHENMKO ENTERPRISE CO.,LTD2SD882GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.*

0.68. 2sd882zgp.pdf Size:120K _chenmko

D882
D882

CHENMKO ENTERPRISE CO.,LTD2SD882ZGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate). 6.50+0

0.69. dxtd882.pdf Size:87K _dc_components

D882

DC COMPONENTS CO., LTD.DXTD882DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for the output stage of 0.75W audio, voltage regulator, and relay driver.SOT-89.063(1.60).066(1.70)Pinning.055(1.40).059(1.50)1 = Base 2 = Collector 3 = Emitter.102(2.60).167(4.25).095(2.40).159(4.05)1 2 3Absolute Maximu

0.70. gstd882.pdf Size:343K _globaltech_semi

D882
D882

GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments TO-252 Pin Description1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua

0.71. 2sd882.pdf Size:214K _inchange_semiconductor

D882
D882

isc Silicon NPN Power Transistor 2SD882DESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEComplement to Type 2SB772Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts audio amplifier,voltage reg

0.72. 2sd882u-p.pdf Size:210K _inchange_semiconductor

D882
D882

isc Silicon NPN Power Transistor 2SD882U-PDESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.8V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in medium power linearand switching applicationsABSOLUTE MAXIMUM RATINGS(T

Datasheet: KT337A , KT337B , KT337V , KT339A , KT339AM , KT339B , KT339BM , KT339D , BD135 , KT339G , KT339GM , KT339V , KT339VM , KT340A , KT340B , KT340D , KT340G .

 

 
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