All Transistors. S9015 Datasheet

 

S9015 Transistor. Datasheet pdf. Equivalent

Type Designator: S9015

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

S9015 Transistor Equivalent Substitute - Cross-Reference Search

S9015 Datasheet (PDF)

1.1. s9015b_s9015c_s9015d.pdf Size:192K _update

S9015
S9015

S9015-B MCC Micro Commercial Components TM S9015-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9015-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.45Watts(Tamb=25OC) of Power Dissipation. PNP Silicon • Collector-current -0.1A • Collector-base Voltage -50V Transistors • Operating

1.2. ss9015.pdf Size:41K _fairchild_semi

S9015
S9015

SS9015 Low Frequency, Low Noise Amplifier Complement to SS9014 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation

1.3. ss9015.pdf Size:59K _samsung

S9015
S9015

SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 Complement to SS9014 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperat

1.4. sts9015.pdf Size:97K _auk

S9015
S9015

STS9015 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) • Low noise : NF = 10dB(Max.) • Complementary pair with STS9014 Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions unit :

1.5. s9015t.pdf Size:597K _secos

S9015
S9015

S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank S9015T-A S9015T-B S9015T-C S9015T-D Range 60~150 100

1.6. s9015.pdf Size:228K _secos

S9015
S9015

S9015 PNP Silicon Elektronische Bauelemente Low Frequency, Low Noise Amplifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : -0.1 A A Emitter H 0.013 0.100 L Col

1.7. s9015w.pdf Size:456K _htsemi

S9015

S901 5W TRANSISTOR(PNP) SOT–323 FEATURES ? Small Surface Mount Package ? High DC Current Gain MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipation 2

1.8. s9015.pdf Size:642K _htsemi

S9015
S9015

S901 5 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Jun

1.9. s9015.pdf Size:241K _gsme

S9015
S9015

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9015 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:hFE(0.1mA)/ hFE(2mA)=0.95(Typ.) Low Noise ???:NF=1dB(Typ.),10db(Max.). Complementary to GM9014 ? GM9014 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ?????

1.10. s9015_to-92.pdf Size:176K _lge

S9015
S9015

S9015(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Dimensi

1.11. s9015_sot-23.pdf Size:185K _lge

S9015
S9015

S9015 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A

1.12. s9015.pdf Size:921K _wietron

S9015
S9015

S9015 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Stor

1.13. s9015lt1.pdf Size:203K _wietron

S9015
S9015

S9015LT1 PNP 3 1 2 SOT-23 Value V CEO -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R S9015SLT1=15S -0.1 -45 -40 -100 -5.0 -100 u -0.1 -40 -0.1 u -3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9015LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE

1.14. s9015_sot-23.pdf Size:257K _can-sheng

S9015
S9015

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING:M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Vo

1.15. ss9015.pdf Size:239K _kexin

S9015
S9015

DIP Type e Transistors SMD Typ PNP Transistors SS9015 Unit:mm TO-92 4.8 ± 0.3 3.8 ± 0.3 Features Complementary to SS9014 0.60 Max 0.45 ± 0.1 0.5 2 1 3 1.Emitter 2.Base 1.27 2.54 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current

1.16. s9015.pdf Size:166K _shenzhen-tuofeng-semi

S9015
S9015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES 2. BASE High total power dissipation.(PC=0.45W) High hFE and good linearity 3. COLLECTOR Complementary to S9014 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol

1.17. s9015lt1.pdf Size:271K _shenzhen-tuofeng-semi

S9015
S9015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25℃) Collector current 2. 4 ICM: -0.1 A 1. 3 Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to

Datasheet: PXT8550 , S8050 , S8550 , S9012 , S9013 , S9013W , S9014 , S9014W , 2SC945 , S9015W , S9018 , S9018W , SS8550B , STD123S , SC116 , SC117 , SC118 .

 


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