SC308 Specs and Replacement
Type Designator: SC308
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SOT23
- BJT ⓘ Cross-Reference Search
SC308 datasheet
0.4. Size:93K sanyo
2sc3087.pdf 
Ordering number EN1011B NPN Triple Diffused Planar Silicon Transistor 2SC3087 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3087] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame... See More ⇒
0.5. Size:96K sanyo
2sc3086.pdf
Ordering number EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3086] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame... See More ⇒
0.6. Size:94K sanyo
2sc3088.pdf
Ordering number EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3088] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒
0.7. Size:98K sanyo
2sc3083.pdf
Ordering number EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3083] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit... See More ⇒
0.8. Size:96K sanyo
2sc3089.pdf
Ordering number EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3089] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒
0.10. Size:235K jmnic
2sc3083.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 500V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol... See More ⇒
0.11. Size:220K jmnic
2sc3089.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 800V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol... See More ⇒
0.12. Size:193K inchange semiconductor
2sc3085.pdf
isc Silicon NPN Power Transistor 2SC3085 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
0.13. Size:195K inchange semiconductor
2sc3087.pdf
isc Silicon NPN Power Transistor 2SC3087 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
0.14. Size:216K inchange semiconductor
2sc3086.pdf
isc Silicon NPN Power Transistor 2SC3086 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
0.15. Size:202K inchange semiconductor
2sc3088.pdf
isc Silicon NPN Power Transistor 2SC3088 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
0.16. Size:220K inchange semiconductor
2sc3083.pdf
isc Silicon NPN Power Transistor 2SC3083 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
0.17. Size:202K inchange semiconductor
2sc3089.pdf
isc Silicon NPN Power Transistor 2SC3089 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base... See More ⇒
Detailed specifications: SC119, SC206, SC207, SC236, SC237, SC238, SC239, SC307, S8550, SC309, SCE237, SCE238, SCE239, SCE307, SCE308, SCE309, SCE535
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