All Transistors. 2N5910 Datasheet

 

2N5910 Datasheet and Replacement


   Type Designator: 2N5910
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 700 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO106
 

 2N5910 Substitution

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2N5910 Datasheet (PDF)

 ..1. Size:65K  central
 2n5910 pn5910 2n5771.pdf pdf_icon

2N5910

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.1. Size:311K  rca
 2n591.pdf pdf_icon

2N5910

 9.2. Size:58K  vishay
 2n5911 2n5912.pdf pdf_icon

2N5910

2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High

 9.3. Size:24K  calogic
 2n5911 2n5912.pdf pdf_icon

2N5910

Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te

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Datasheet: 2N5896 , 2N5897 , 2N5898 , 2N5899 , 2N59 , 2N5900 , 2N5901 , 2N591 , BD777 , 2N5913 , 2N5914 , 2N5915 , 2N591-5 , 2N5916 , 2N5917 , 2N5918 , 2N5918A .

History: GT250-6B | 3DA2 | BCY78B | RT2P14M | 2N1201 | 2S122 | HA8050

Keywords - 2N5910 transistor datasheet

 2N5910 cross reference
 2N5910 equivalent finder
 2N5910 lookup
 2N5910 substitution
 2N5910 replacement

 

 
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