All Transistors. 2N5916 Datasheet

 

2N5916 Datasheet and Replacement


   Type Designator: 2N5916
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 4 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 24 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO128
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2N5916 Datasheet (PDF)

 9.1. Size:311K  rca
 2n591.pdf pdf_icon

2N5916

 9.2. Size:58K  vishay
 2n5911 2n5912.pdf pdf_icon

2N5916

2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High

 9.3. Size:65K  central
 2n5910 pn5910 2n5771.pdf pdf_icon

2N5916

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.4. Size:24K  calogic
 2n5911 2n5912.pdf pdf_icon

2N5916

Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: D29E10 | 2SA315 | 2N1023 | 2N2618-46 | DTL1642 | 2SAB43A | 3DD5G

Keywords - 2N5916 transistor datasheet

 2N5916 cross reference
 2N5916 equivalent finder
 2N5916 lookup
 2N5916 substitution
 2N5916 replacement

 

 
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