2N5919 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5919
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 25 pF
Noise Figure, dB: -
Package: TO128
2N5919 Transistor Equivalent Substitute - Cross-Reference Search
2N5919 Datasheet (PDF)
2n5911 2n5912.pdf
2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High
2n5910 pn5910 2n5771.pdf
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2n5911 2n5912.pdf
Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
