All Transistors. 2N5919A Datasheet

 

2N5919A Datasheet and Replacement


   Type Designator: 2N5919A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 16 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 20 pF
   Noise Figure, dB: -
   Package: TO128
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2N5919A Datasheet (PDF)

 9.1. Size:311K  rca
 2n591.pdf pdf_icon

2N5919A

 9.2. Size:58K  vishay
 2n5911 2n5912.pdf pdf_icon

2N5919A

2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High

 9.3. Size:65K  central
 2n5910 pn5910 2n5771.pdf pdf_icon

2N5919A

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.4. Size:24K  calogic
 2n5911 2n5912.pdf pdf_icon

2N5919A

Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te

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Datasheet: 2N5914 , 2N5915 , 2N591-5 , 2N5916 , 2N5917 , 2N5918 , 2N5918A , 2N5919 , 2N5401 , 2N591A , 2N592 , 2N5920 , 2N5921 , 2N5922 , 2N5923 , 2N5924 , 2N5925 .

History: 2SC3712 | 2SA1407E | 2N2872 | 2SA1262 | 3DG1675 | T11 | NB221YX

Keywords - 2N5919A transistor datasheet

 2N5919A cross reference
 2N5919A equivalent finder
 2N5919A lookup
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