2N5919A Specs and Replacement
Type Designator: 2N5919A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 16 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 20 pF
Package: TO128
2N5919A Substitution
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2N5919A datasheet
2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) 2N5911 1 to 5 25 5 1 10 2N5912 1 to 5 25 5 1 15 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential Amps High-Frequency Performance D High... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Te... See More ⇒
Detailed specifications: 2N5914, 2N5915, 2N591-5, 2N5916, 2N5917, 2N5918, 2N5918A, 2N5919, C945, 2N591A, 2N592, 2N5920, 2N5921, 2N5922, 2N5923, 2N5924, 2N5925
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