BCP156 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCP156
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
BCP156 Transistor Equivalent Substitute - Cross-Reference Search
BCP156 Datasheet (PDF)
bcp156.pdf
BCP156NPN Silicon Elektronische BauelementePlanar High Performance TransistorRoHS Compliant ProductSOT-89DescriptionThe BCP156 is designed for general purposeswitching and amplifier applications.Features* 3 Amp Continuous Current* 60 Volt VCEO* Low Saturation VoltageMillimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF
bcp157.pdf
BCP157PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductFeaturesSOT-891. -60Volt V CEO1.BASE2. 3 Amp continuous currentD2.COLLECTOR D1 A3. Low saturation voltage3.EMITTER b1Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VbCeCollector-emitter voltage VCEO -60
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
