BCP772 Specs and Replacement

Type Designator: BCP772

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

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BCP772 datasheet

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BCP772

BCP772 -3 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 The BCP772 is designed for using in output stage of amplifier, voltage regulator, DC-DC converter and relay driver. 4 1 2 3 CLASSIFICATION OF hFE(2) A E C Product-Rank BCP772-Q BCP772-P BCP772-E Ra... See More ⇒

Detailed specifications: BCP1766, BCP1898, BCP195, BCP2098, BCP4672, BCP5401, BCP5551, BCP669A, A1013, BCP869, BCP882, BCPA14, BCPA42, BCPA94, BD13003B, CZD1182, CZD1386

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