PZT157 Datasheet, Equivalent, Cross Reference Search
Type Designator: PZT157
SMD Transistor Code: 157
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
PZT157 Transistor Equivalent Substitute - Cross-Reference Search
PZT157 Datasheet (PDF)
pzt157.pdf
PZT157PNP Transistor Elektronische BauelementeSilicon Planar High Performance Transistor RoHS Compliant ProductSOT-223 Description The PZT157 is designed for general purpose switching and amplifier applications. Features * 3 Amps Continous CurrentMillimeterMillimeter * -60 Volt VCEOREF. REF. Min. Max.
pzt159.pdf
PZT159PNP Silicon PlanarElektronische Bauelemente High Current TransistorRoHS Compliant ProductFeatures* 5 Amps continuous current, up to 15 Amp peak current. SOT-223 * Excellent gain characteristic specified up to 10Amps. R0.15* Very low saturation voltageR0.15 0.25Mechanical DataC121 121Case: SOT-223 Plastic Package 1.
pzt158.pdf
PZT158NPN Transistor Elektronische BauelementeSilicon Planar High Current TransistorRoHS Compliant ProductSOT-223Description The PZT158 is designed for general purpose switching and amplifier applications. Features * 6Amps Continous Current, Up To 20Amps Peak Current * Excellent Gain Characteristic,REF. REF. Min. Max. Min. Max. Specified Up To 10AmpsA 6.70 7.
pzt159.pdf
PZT159PNP Silicon Planar High Current TransistorCOLLECTOR2, 4 SOT-223P b Lead(Pb)-Free 41. BASEBASE2.COLLECTOR113.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)Rating Symbol Value UnitVCBO -100 VCollector to Base VoltageVCEO V-60Collector to Emitter VoltageVCollector to Base Voltage VEBO -6IC(DC) -5 ACollector CurrentIC(Puls
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