All Transistors. PZTA27 Datasheet

 

PZTA27 Datasheet and Replacement


   Type Designator: PZTA27
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: SOT223
 
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PZTA27 Datasheet (PDF)

 ..1. Size:652K  secos
 pzta27.pdf pdf_icon

PZTA27

PZTA27NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZTA27 is designed for darlingtonamplifier high current gain collector current to 500mA.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. A 2 7 D 0.02 0.10 1 6.30 6.70 Date CodeE 0 10 2 6.30 6.

 9.1. Size:628K  fairchild semi
 mpsa28 mmbta28 pzta28.pdf pdf_icon

PZTA27

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

 9.2. Size:82K  fairchild semi
 pzta29.pdf pdf_icon

PZTA27

PZTA29NPN Darlington Transistor This device designed for applications requiring extremely high current gain at collector currents to 500mA. Sourced from process 03.4321 SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 10

Datasheet: PZT4672 , PZT559 , PZT559A , PZT6718 , PZT772 , PZT882 , PZT965 , PZT987A , BD136 , PZTA94 , SZD772 , 2SD2583 , BCP1300 , BCP1616A , BCP194A , BCP3019 , BCP3906 .

History: MMBT3568 | PBLS4001D | 2SC4498 | KSD1417

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