EMG11 Datasheet and Replacement
Type Designator: EMG11
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-553
EMG11 Substitution
EMG11 Datasheet (PDF)
emg11 umg11n fmg11a.pdf

EMG11 / UMG11N / FMG11ATransistorsEmitter common (dual digital transistors)EMG11 / UMG11N / FMG11A External dimensions (Units : mm) Features1) Two DTA123Js chips in a EMT or UMT or SMTEMG11 package.(4) (3)( )2( ) ( )5 11.21.6 Equivalent circuitEach lead has same dimensionsEMG11 / UMG11N FMG11AROHM : EMT5(3) (2) (1) (3) (4) (5)R1 R1 R1 R1R2 R2 R2 R2U
emg11.pdf

EMG11 Dual N-Ch Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-553 Two DTC123JCA chips in a package AEQUIVALENT CIRCUIT BJD G HF ECMillimeter MillimeterREF. REF. Min. Max. Min. Max.A 1.50 1.70 F 0.09 0.16B 1.50 1.70 G 0.45 0.55C 0.525 0.60 H 0.17
chemg11gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG11GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: BC55-10PAS | BC56-10PAS | ECG93
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History: BC55-10PAS | BC56-10PAS | ECG93



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