SMUN5311DW Datasheet, Equivalent, Cross Reference Search
Type Designator: SMUN5311DW
SMD Transistor Code: 11
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT-363
SMUN5311DW Transistor Equivalent Substitute - Cross-Reference Search
SMUN5311DW Datasheet (PDF)
smun5311dw series.pdf
SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. DESCRIPTION SOT-363 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors
smun52xxdw.pdf
SMUN52XXDW NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorThe BRT (Bias Resistor Transistor) contains a single transistorSOT-363 with a monolithic bias network consisting of two resistors; a series o.055(1.40)8 base resistor and a baseemitter resistor. These digital transistors are .047(1.20)0o .026TYP designed to replace a single device and its e
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