MBT2222ADW
Datasheet, Equivalent, Cross Reference Search
Type Designator: MBT2222ADW
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 75
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.6
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 300
MHz
Collector Capacitance (Cc): 8
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT-363
MBT2222ADW
Transistor Equivalent Substitute - Cross-Reference Search
MBT2222ADW
Datasheet (PDF)
..1. Size:384K wietron
mbt2222adw.pdf
MBT2222ADWDual General Purpose Transistors2 13654NPN+NPN Silicon12345 6SOT-363(SC-88)NPN+NPNValueVCEO(1)150833T ,Tstg -55 to+150JMBT2222ADW=XXu1. Device mounted on FR4 glass epoxy printed circuit board usingthe minimum recommended footprintWEITRONhttp://www.weitron.com.twMBT2222ADWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not
0.1. Size:160K onsemi
mbt2222adw1t1g.pdf
MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
0.2. Size:164K onsemi
mbt2222adw1t1.pdf
MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
0.3. Size:139K onsemi
mbt2222adw1 nsvbt2222adw1.pdf
MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM
0.4. Size:341K willas
mmbt2222adw1t1.pdf
FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o
0.5. Size:250K lrc
lmbt2222adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
0.6. Size:250K lrc
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
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