MJE13003B PDF and Equivalents Search

 

MJE13003B Specs and Replacement

Type Designator: MJE13003B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO92

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MJE13003B datasheet

 ..1. Size:178K  wietron

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MJE13003B

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enh... See More ⇒

 ..2. Size:206K  sisemi

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MJE13003B

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE ... See More ⇒

 ..3. Size:77K  first silicon

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MJE13003B

SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=0.5 S(Max.), tf=0.7 S(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA... See More ⇒

 0.1. Size:385K  sisemi

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MJE13003B

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Detailed specifications: LB123T , M8050LT1 , M8550LT1 , MBT2222ADW , MBT2907ADW , MBT3904DW , MBT3906DW , MBT3946DW , D882 , MMBT3904E , MMBT3906E , MMDT2227DW , MSB709 , MSD601 , MXTA42 , PZT5401 , PZT5551 .

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