MSB709 Specs and Replacement
Type Designator: MSB709
SMD Transistor Code: AR
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 210
Package: SOT23
MSB709 Substitution
- BJT ⓘ Cross-Reference Search
MSB709 datasheet
MSB709 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current - Continuous -100 mA IC(P) Collector Current - Peak -200 mA Total Device Dissipation PD 0.2 mW TA=25 C Tj C Junction Temper... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSB709 RT1/D PNP General Purpose Amplifier MSB709-RT1 Transistor Surface Mount Motorola Preferred Device COLLECTOR 3 3 2 1 2 1 BASE EMITTER CASE 318D 03, STYLE 1 MAXIMUM RATINGS (TA = 25 C) SC 59 Rating Symbol Value Unit Collector Base Voltage V(BR)CBO 60 Vdc Collector Emitter Voltage V(BR)CEO 45 V... See More ⇒
MSB709-RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http //onsemi.com Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO -60 Vdc 2 1 Collector - Emitter Voltage V(BR)CEO -45 Vdc BASE EMITTER Emitter - Base Voltage V(BR)EBO -7.0 Vdc Collector Current - Conti... See More ⇒
Detailed specifications: MBT2907ADW , MBT3904DW , MBT3906DW , MBT3946DW , MJE13003B , MMBT3904E , MMBT3906E , MMDT2227DW , 2N3906 , MSD601 , MXTA42 , PZT5401 , PZT5551 , PZT951 , S9012LT1 , S9013LT1 , S9014LT1 .
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