2N594 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N594
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N594 Transistor Equivalent Substitute - Cross-Reference Search
2N594 Datasheet (PDF)
0.5. Size:71K central
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.6. Size:13K advanced-semi
2n5945.pdf
2n5945.pdf
2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45FEATURES:C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D JE IMAXIMUM RATINGS FGIC 0.8 A H#8-32 UNCKVCBO 36 V MINIMUM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
