WTM1766 Datasheet, Equivalent, Cross Reference Search
Type Designator: WTM1766
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: SOT-89
WTM1766 Transistor Equivalent Substitute - Cross-Reference Search
WTM1766 Datasheet (PDF)
wtm1766.pdf
WTM1766NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValue40Collector-Base Voltage VCBO VCollector-Emitter Voltage VCEO 32 V5.0Emitter-Base Voltage VEBO VCollector Current -Continuous IC 2.0ACollector Power dissipation PC mW500Junction Temper
wtm1797.pdf
WTM1797PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 1FEATURES23* Low saturation voltage * Excellent DC current gain characteristicsSOT-89* Complements to 2SC4672MAXIMUM RATINGS (TA=25 unless otherwise noted)ParameterSymbol UnitsValueCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
