WTP882 Specs and Replacement
Type Designator: WTP882
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO251
WTP882 Substitution
- BJT ⓘ Cross-Reference Search
WTP882 datasheet
WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors TO-251 P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/WTP772 Unit NPN/WTP882 Collector-Emitter Voltage V 30 Vdc CEO -30 Collector-Base Voltage VCBO -40 40 Vdc Emitter-B ase Voltage VEBO -5.0 5.0 Vdc Collector Current (DC) IC(DC) -3.0 3.0 Adc Adc Collector Current (... See More ⇒
Detailed specifications: WTM5551, WTM649A, WTM669A, WTM772, WTM882, WTMA44, WTP772BCE, WTP772-ECB, A1013, WTS772, WTS882, DTA114TM, DTA143TM, DTA144WM, DTC114TM, DTC143TM, DTC144TM
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