2N5947 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5947
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO117
2N5947 Transistor Equivalent Substitute - Cross-Reference Search
2N5947 Datasheet (PDF)
9.4. Size:71K central
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.5. Size:13K advanced-semi
2n5945.pdf
2n5945.pdf
2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the PACKAGE STYLE .280 4L STUD 400 to 960 MHz. A 45FEATURES:C Common Emitter B E E PG = 9.0 dB at 2.0 W/470 MHz B Omnigold Metalization System C D JE IMAXIMUM RATINGS FGIC 0.8 A H#8-32 UNCKVCBO 36 V MINIMUM
Datasheet: 2N5940 , 2N5941 , 2N5941T , 2N5942 , 2N5943 , 2N5944 , 2N5945 , 2N5946 , 2N2222A , 2N595 , 2N5954 , 2N5955 , 2N5956 , 2N5957 , 2N5958 , 2N5959 , 2N596 .
