KTA1360 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTA1360
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO126
KTA1360 Transistor Equivalent Substitute - Cross-Reference Search
KTA1360 Datasheet (PDF)
kta1360.pdf
SEMICONDUCTOR KTA1360TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATION.ABDCEFEATURES FHigh Voltage : VCEO=-150V.Low Output Capacitance : Cob=5.0pF(Max.).GHigh Transition Frequency : fT=120MHz(Typ.)HComplementary to KTC3423.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3MAXIMUM RATIN
kta1385d l.pdf
SEMICONDUCTOR KTA1385D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW COLLECTOR SATURATION VOLTAGELARGE CURRENT AI C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2High Power Dissipation : PC=1.3W(Ta=25 )_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC5103D/L_D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00 +
kta1381.pdf
SEMICONDUCTOR KTA1381TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH-DEFINITION CRT DISPLAY,ABVIDEO OUTPUT APPLICATIONS.DCEFEATURES FHigh breakdown voltage : VCEO 300V.Small reverse transfer capacitance and Gexcellent high frequency characteristic. H: Cre=2.3pF (VCB=30V, f=1MHz)DIM MILLIMETERSJA 8.3 MAXComplementary KTC3503. KB 5.8LC 0.7_+
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N2625
