KTA1385D Datasheet, Equivalent, Cross Reference Search
Type Designator: KTA1385D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: DPAK
KTA1385D Transistor Equivalent Substitute - Cross-Reference Search
KTA1385D Datasheet (PDF)
kta1385d l.pdf
SEMICONDUCTOR KTA1385D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW COLLECTOR SATURATION VOLTAGELARGE CURRENT AI C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2High Power Dissipation : PC=1.3W(Ta=25 )_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC5103D/L_D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00 +
kta1381.pdf
SEMICONDUCTOR KTA1381TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH-DEFINITION CRT DISPLAY,ABVIDEO OUTPUT APPLICATIONS.DCEFEATURES FHigh breakdown voltage : VCEO 300V.Small reverse transfer capacitance and Gexcellent high frequency characteristic. H: Cre=2.3pF (VCB=30V, f=1MHz)DIM MILLIMETERSJA 8.3 MAXComplementary KTC3503. KB 5.8LC 0.7_+
kta1360.pdf
SEMICONDUCTOR KTA1360TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATION.ABDCEFEATURES FHigh Voltage : VCEO=-150V.Low Output Capacitance : Cob=5.0pF(Max.).GHigh Transition Frequency : fT=120MHz(Typ.)HComplementary to KTC3423.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3MAXIMUM RATIN
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
