KTA1520S Datasheet and Replacement

SEMICONDUCTOR KTA1520STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. EL B LDIM MILLIMETERSMAXIMUM RATING (Ta=25 )_+2.93 0.20AB 1.30+0.20/-0.15CHARACTERISTIC SYMBOL RATING UNITC 1.30 MAX23 D 0.45+0.15/-0.05VCBO -120 VCollector-Base VoltageE 2.40+0.30/-0.201G 1.90VCEO -100 VCollector-Emitter VoltageH 0.95J 0.13+0.10/-0.05V

MCCKTA1504-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components KTA1504-YCA 91311Phone: (818) 701-4933KTA1504-GRFax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Complementary to KTC3875 Low NoiseEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Mo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors KTA1504 TRANSISTOR (PNP) SOT23 FEATURES Complementary to KTC3875 Low Noise Excellent hFE Linearity 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBOV Collector

www.jscj-elec.com AD-KTA1505 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KTA1505 series Plastic-Encapsulated Transistor AD-KTA1505 series Transistor (PNP) FEATURES Excellent hFE linearity Complementary to AD-KTC3876 AEC-Q101 qualified Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-KTA1505 series MAXIMUM RATINGS (T = 25C unless otherwise spe

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 KTA1505 TRANSISTORPNPFEATURES 1. BASE Excellent hFE linearity:2. EMITTER 3. COLLECTOR Complementary to KTC3876MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V V Collector-Emitter Voltage -30 V CEOV

SEMICONDUCTOR KTA1531TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY POWER AMP, CONVERTERELECTRONIC GOVERNOR APPLICATIONS EBFEATURES KDIM MILLIMETERSLow Saturation Voltage _A 2.9 + 0.2B 1.6+0.2/-0.1: VCE(sat)=0.3V(Max.) at IC=0.5A._C 0.70 + 0.0523Complementary to KTC3531T. _D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05

SEMICONDUCTOR KTA1532UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW FREQUENCY AMPLIFIER DRIVERFEATURESEA Collector Current is large.M B MDIM MILLIMETERSCollector Saturation Voltage is low._A 2.00 0.20+D2VCE(sat) -200mV at IC=500mA, ID=-25mA. _+B 1.25 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30

SEMICONDUCTOR KTA1544TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

SEMICONDUCTOR KTA1535TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

SEMICONDUCTOR KTA1572TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.B DHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERSA 7.20 MAXB 5.20 MAXC 0.60 MAXPD 2.50 MAXMAXIMUM RATING (Ta=25 ) DEPTH:0.2E 1.15 MAXF 1.27CCHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KTA1517STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.FEATURESEL B LHigh Voltage : VCEO=-120V.DIM MILLIMETERSExcellent hFE Linearity_+A 2.93 0.20B 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05High hFE: hFE=200700.E 2.40+0.30/-0.20Low Noise : NF=1dB(Typ.), 10dB(Max.). 1

SEMICONDUCTOR KTA1517TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.FEATURESEL B LHigh Voltage : VCEO=-120V.DIM MILLIMETERSExcellent hFE Linearity_+2.93 0.20AB 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX2High hFE: hFE=200 700. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Noise : NF=1dB(Typ.), 10dB(Max.).1G 1.90

SEMICONDUCTOR KTA1551TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

SEMICONDUCTOR KTA1542TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

SEMICONDUCTOR KTA1532TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 + 0.21

SEMICONDUCTOR KTA1504STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity _+A 2.93 0.20B 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).C 1.30 MAX23 D 0.40+0.15/-0.05Low Noise : NF=1dB(Typ.), 10dB(Max.).E 2.40+0.30/-0.201Complementary to KTC3875S.G 1.9

SEMICONDUCTOR KTA1541TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1Large Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.

SEMICONDUCTOR KTA1552TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORDC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of FBET, MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed

SEMICONDUCTOR KTA1505STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EFEATURES L B LDIM MILLIMETERSExcellent hFE Linearity_+A 2.93 0.20B 1.30+0.20/-0.15: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.C 1.30 MAX2Complementary to KTC3876S. 3 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.0

SEMICONDUCTOR KTA1543TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS, STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High-Speed Switching._F 1.9 +

SEMICONDUCTOR KTA1553TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3Ultrasmall-Sized Package permit

SEMICONDUCTOR KTA1536TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORRELAY DRIVERS, LAMP DRIVERS,MOTOR DRIVERS AND STROBES APPLICATION.EBFEATURES KDIM MILLIMETERSAdoption of MBIT Processes._A 2.9 + 0.2B 1.6+0.2/-0.1High Current Capacitance._C 0.70 + 0.0523Low Collector-to-Emitter Saturation Voltage. _D 0.4 + 0.1E 2.8+0.2/-0.3High Speed Switching._F 1.9

SEMICONDUCTOR KTA1571STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.Higher Efficiency Leading to Less Heat Generation.EL B LDIM MILLIMETERS_+A 2.93 0.20MAXIMUM RATING (Ta=25)B 1.30+0.20/-0.15C 1.30 MAXCHARACTERISTIC SYMBOL RATING UNIT 23 D 0.40+0.15/-0

KTA1505 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity: hFE(2)=25(Min).at VCE=-6V,IC=-400mA Complementary to KTC3876 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base

KTA1504PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -50 VCollector-Emitter VoltageVCEO-50 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -150 mATotal Device DissipationPD150 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -5

KTA1505PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -35 VCollector-Emitter VoltageVCEO-30 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -500 mATotal Device DissipationPD150 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -5

KTA1504 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, KTC3875 Excellent hFE linearity, low noise, complementary pair with KTC3875. / Applications General amplifier a

KTA1505 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , KTC3876 Excellent hFE linearity, complementary pair with KTC3876. / Applications General amplifier and switching application.

SEMICONDUCTOR KTA1504LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR General purpose application Package:SOT-23 * Complement to KTC3875LT1 * Collector Current :Ic=-150mA * low noise:NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -50 V Collector-Emitter Voltag

SMD Type TransistorsPNP TransistorsKTA1504SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Excellent hFE Linearity Low Noise 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to KTC3875+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector -

SMD Type TransistorsPNP TransistorsKTA1504SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Excellent hFE Linearity : hFE(0.1mA) / hFE(2mA)=0.95(Typ.).1 2 Low Noise : NF=1dB(Typ.), 10dB(Max.). +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to KTC3875S.1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type TransistorsPNP TransistorsKTA1505 (KTA1505S)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Excellent hFE Linearity Comlementary to KTC3876/KTC3876S1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector

Plastic-Encapsulate TransistorsFEATURESKTA1504(PNP) Complementary To KTC3875.FE Excellent H Linearity. Low noise.Maximum Ratings (TA=25 unless otherwise noted)ParameterSymbol Value UnitVCBOCollector-Base Voltage-50 V1. BASEVCEOCollector-Emitter Voltage-50 V2. EMITTER SOT-23VEBOEmitter-Base Voltage-5 V3. COLLECTOICCollector Current -Continuo