KTA2012V Datasheet and Replacement

SEMICONDUCTOR KTA2012VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. FEATURESE A Collector Current is Large.B Collector Saturation Voltage is low.: VCE(sat) -250mV at IC=-200mA/IB=-10mA.DIM MILLIMETERS2_ Complementary to KTC4072V. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.8 + 0.05H 0.40P PMAXI

SEMICONDUCTOR KTA2012ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. FEATURESE A Collector Current is Large.BDIM MILLIMETERS Collector Saturation Voltage is low._+A 1.60 0.10D: VCE(sat) -250mV at IC=-200mA/IB=-10mA. _+2 B 0.85 0.10_+C 0.70 0.10 Complementary to KTC4072E.31D 0.27+0.10/-0.05_+E 1.60 0.10_+1.00 0.10G

KTA2014-OMCCMicro Commercial ComponentsTMKTA2014-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTA2014-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Low frequency power amplifier applicationPlastic-Encapsulate Power switching

KTA2014 -0.15A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low frequency power amplifier application A Power switching application L33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank KTA2014-O KTA2014-Y KTA2014-GR Range 70~140 120~240

SEMICONDUCTOR KTA2017TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION. FEATURES EHigh Voltage : VCEO=-120V.M B MDIM MILLIMETERSExcellent hFE Linearity_A+2.00 0.20D2: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+B 1.25 0.15_+C 0.90 0.10High hFE: hFE=200700.31D 0.3+0.10/-0.05_E +2.10 0.20Low Noise : NF=1dB(Typ.),

SEMICONDUCTOR KTA2014ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBDIM MILLIMETERSExcellent hFE Linearity_+A 1.60 0.10D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+2 B 0.85 0.10_+C 0.70 0.10Low Noise : NF=1dB(Typ.), 10dB(Max.).31D 0.27+0.10/-0.05_Complementary to KTC4075E. E 1.60 0.10+_+

SEMICONDUCTOR KTA2014FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.), 10dB(Max.).Complementary to KTC4075F. DIM MILLIMETERS2_A 0.6 + 0.05Thin Fine Pitch Small Package.3 _+B 0.8 0.05C 0.38+0.02/-0.041_+D

SEMICONDUCTOR KTA2013FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).High hFE : hFE=120~400.Complementary to KTC4074F. DIM MILLIMETERS2_A 0.6 + 0.05Thin Fine Pitch Small Package.3 _+B 0.8 0.05C 0.38+0.02/-0.041_+D 0.2 0.05_+

SEMICONDUCTOR KTA2014TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESM B MDIM MILLIMETERSExcellent hFE Linearity_+A 2.00 0.20D2_: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). B 1.25 0.15+_+C 0.90 0.103Low Noise : NF=1dB(Typ.), 10dB(Max.). 1D 0.3+0.10/-0.05_+E 2.10 0.20Complementary to KTC4075

SEMICONDUCTOR KTA2015TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSExcellent hFE Linearity_A+2.00 0.20D2: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. _+B 1.25 0.15_+C 0.90 0.10Complementary to KTC4076.31D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.3

SEMICONDUCTOR KTA2014VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERS2_Low Noise : NF=1dB(Typ.), 10dB(Max.). A 1.2 +0.05_B 0.8 +0.05Complementary to KTC4075V. 13_C 0.5 + 0.05_D 0.3 + 0.05Very Small Package._E 1.2 + 0.05

KTA2014TRANSISTOR (PNP) SOT-323 FEATURES Low frequency power amplifier application 1. BASE 2. EMITTER Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous 150 m

KTA2015TRANSISTOR (PNP) FEATURES Excellent hFE Linearity SOT323 Complementary to KTC4076 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO3. COLLECTOR VCEO Collector-Emitter Voltage -30 V V Emitter-Base Voltage -5 V EBOI Col

KTA2014 SOT-323 Transistor(PNP)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)

KTA2015PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-323MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -35 VCollector-Emitter VoltageVCEO-30 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -500 mATotal Device DissipationPD100 mWT =25CATj CJunction Temperature +150TstgStorage Temperatur

SMD Type TransistorsPNP TransistorsKTA2014 Features Excellent hFE Linearity Low Noise Small Package Complementary to KTC40751.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

SMD Type TransistorsPNP TransistorsKTA2015 Features Excellent hFE Linearity Complementary to KTC40761.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500mA Base Current IB