2N5963 Specs and Replacement
Type Designator: 2N5963
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 1200
Package: TO92
2N5963 Substitution
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2N5963 datasheet
Tel (631) 435-1110 Fax (631) 435-1824 www. cent ral semi . com ... See More ⇒
Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Volta... See More ⇒
Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒
Detailed specifications: 2N5956, 2N5957, 2N5958, 2N5959, 2N596, 2N5960, 2N5961, 2N5962, 2SD313, 2N5964, 2N5965, 2N5966, 2N5967, 2N5968, 2N5969, 2N597, 2N5970
Keywords - 2N5963 pdf specs
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History: 2N5964
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