2N5966 Specs and Replacement
Type Designator: 2N5966
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 550 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO61
2N5966 Substitution
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2N5966 datasheet
Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Volta... See More ⇒
Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒
Tel (631) 435-1110 Fax (631) 435-1824 www. cent ral semi . com ... See More ⇒
Detailed specifications: 2N5959, 2N596, 2N5960, 2N5961, 2N5962, 2N5963, 2N5964, 2N5965, SS8050, 2N5967, 2N5968, 2N5969, 2N597, 2N5970, 2N5971, 2N5972, 2N5973
Keywords - 2N5966 pdf specs
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