2N5969 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5969
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 875 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO61
2N5969 Transistor Equivalent Substitute - Cross-Reference Search
2N5969 Datasheet (PDF)
2n5961.pdf
Discrete POWER & SignalTechnologies2N5961C TO-92BENPN General Purpose AmplifierThis device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA. Sourcedfrom Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Val60ue UnitsVCEO Collector-Emitter Volta
2n5962 mmbt5962.pdf
Discrete POWER & SignalTechnologies2N5962 MMBT5962CEC TO-92BBE SOT-23Mark: 117NPN General Purpose AmplifierThis device is designed for use as low noise, high gain, generalpurpose amplifiers requiring collector currents to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value U
2n5961 2n5962 2n5963.pdf
Tel: (631) 435-1110 Fax: (631) 435-1824www. cent ral semi . com
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
