KTC3551T Datasheet. Specs and Replacement
Type Designator: KTC3551T 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 420 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TSM
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KTC3551T datasheet
..1. Size:89K kec
ktc3551t.pdf 
SEMICONDUCTOR KTC3551T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1 ... See More ⇒
..2. Size:948K kexin
ktc3551t.pdf
SMD Type Transistors NPN Transistors KTC3551T SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of MBIT Processes. Large Current Capacitance. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low Collector-to-Emitter Saturation Voltage. 1.9+0.1 -0.1 High-Speed Switching. High Allowable Power Dis sipation. 1.Base Complementary to KTA1551T. 2.... See More ⇒
8.1. Size:89K kec
ktc3553t.pdf
SEMICONDUCTOR KTC3553T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Ultrasmall-Sized Package permit... See More ⇒
8.2. Size:377K kec
ktc3552t.pdf
SEMICONDUCTOR KTC3552T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of FBET, MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Hig... See More ⇒
9.1. Size:90K kec
ktc3541t.pdf
SEMICONDUCTOR KTC3541T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.... See More ⇒
9.2. Size:85K kec
ktc3544t.pdf
SEMICONDUCTOR KTC3544T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.... See More ⇒
9.3. Size:56K kec
ktc3572.pdf
SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. B D Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS A 7.20 MAX B 5.20 MAX C 0.60 MAX P D 2.50 MAX MAXIMUM RATING (Ta=25 ) DEPTH 0.2 E 1.15 MAX F 1.27 C CHARACTERISTIC SYMBOL RATING UNIT... See More ⇒
9.4. Size:90K kec
ktc3536t.pdf
SEMICONDUCTOR KTC3536T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.9... See More ⇒
9.5. Size:89K kec
ktc3535t.pdf
SEMICONDUCTOR KTC3535T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.9... See More ⇒
9.6. Size:39K kec
ktc3531t.pdf
SEMICONDUCTOR KTC3531T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS E B FEATURES K DIM MILLIMETERS Low Saturation Voltage _ A 2.9 + 0.2 B 1.6+0.2/-0.1 VCE(sat)=0.3V(Max.) at IC=0.5A. _ C 0.70 + 0.05 2 3 Complementary to KTA1531T. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 1 G 0.95 _ H 0.16 + 0.05 ... See More ⇒
9.7. Size:576K kec
ktc3544s.pdf
SEMICONDUCTOR KTC3544S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. FEATURES E Adoption of MBIT Processes. L B L DIM MILLIMETERS Large Current Capacitance. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Low Collector-to-Emitter Saturation Voltage. C 1.30 MAX 2 High Speed Switching. 3 D 0.40+0.15/-0.05 E 2.40+0.30... See More ⇒
9.8. Size:397K kec
ktc3502.pdf
SEMICONDUCTOR KTC3502 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH-DEFINITION CRT DISPLAY A B VIDEO OUTPUT APPLICATION. D C E FEATURES F High Voltage VCEO=200V. High Transition Frequency fT=150MHz(Typ.). G Low Collector Output Capacitance Cob=1.7pF(Typ.). H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F ... See More ⇒
9.9. Size:398K kec
ktc3503.pdf
SEMICONDUCTOR KTC3503 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH-DEFINITION CRT DISPLAY, A B VIDEO OUTPUT APPLICATIONS. D C E FEATURES F High breakdown voltage VCEO 300V. Small reverse transfer capacitance and G excellent high frequency characteristic. H Cre=1.8pF (VCB=30V, f=1MHz) DIM MILLIMETERS J A 8.3 MAX Complementary KTA1381. K B 5.8 L C 0.7 _ + D... See More ⇒
9.10. Size:90K kec
ktc3542t.pdf
SEMICONDUCTOR KTC3542T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 +... See More ⇒
9.11. Size:89K kec
ktc3543t.pdf
SEMICONDUCTOR KTC3543T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + ... See More ⇒
9.12. Size:356K kec
ktc3571s.pdf
SEMICONDUCTOR KTC3571S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). E High Collector Current Capability IC and ICP. L B L Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 ... See More ⇒
9.13. Size:89K kec
ktc3532t.pdf
SEMICONDUCTOR KTC3532T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1 ... See More ⇒
Detailed specifications: KTC3531T, KTC3532T, KTC3535T, KTC3536T, KTC3541T, KTC3542T, KTC3543T, KTC3544T, BC548, KTC3553T, KTC3600S, KTC3600U, KTC3605T, KTC3605U, KTC3620S, KTC3620U, KTC3620V
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