KTC3878S Datasheet, Equivalent, Cross Reference Search

SEMICONDUCTOR KTC3878STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF, VHF AMPLIFIER APPLICATION.EL B LFEATUREDIM MILLIMETERS Low Noise Figure : NF=3.5dB(Max.) (f=1MHz)._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.0

MCCMicro Commercial ComponentsTMKTC3876-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3876-GRPhone: (818) 701-4933Fax: (818) 701-4939Features High hFE and Low NoiseEpitaxial Planar Complementary to KTA1505 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Halo

MCCMicro Commercial Components TMKTC3875-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3875-GRPhone: (818) 701-4933Fax: (818) 701-4939Features High hFE and Low NoiseEpitaxial Planar Complementary to KTA1504 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Ha

KTC3879 0.05A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A High Power Gain L33APPLICATIONS Top View C B1 High Frequency Application 1 22 HF, VHF Band Amplifier Application K EDCLASSIFICATION OF hFE H JF GProduct-Rank KTC3879-R KTC3879

KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High hFE AL Low noise 33 Complementary to KTA1504 Top ViewC B11 2CLASSIFICATION OF hFE 2K EProduct-Rank KTC3875-O KTC3875-Y KTC3875-GR KTC3875-BL DRange 70~140 120~240 200~400 350~

KTC3876 0.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High hFE L Complementary to KTA1505 33Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank KTC3876-O KTC3876-Y KTC3876-GR DRange 70~140 120~240 200~400 H JF GMarking Code WO W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Low noise 2. EMITTER 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50

SEMICONDUCTOR KTC3879STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.EL B LFEATUREDIM MILLIMETERS High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz)_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHA

SEMICONDUCTOR KTC3875STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20Excellent hFE LinearityB 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX23 D 0.40+0.15/-0.05High hFE : hFE=70700.E 2.40+0.30/-0.201G 1.90Low Noise : NF=1dB(Typ.), 10dB(Max.).

SEMICONDUCTOR KTC3876STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERSExcellent hFE Linearity_+2.93 0.20AB 1.30+0.20/-0.15: hFE(2)=25(Min.) at VCE=6V, IC=400mA.C 1.30 MAX2Complementary to KTA1505S. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~

KTC3879TRANSISTOR (NPN) SOT23 FEATURES High Power Gain APPLICATIONS High Frequency Application HF,VHF Band Amplifier Application 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 35 V CBOV Collector-Emitter Voltage 30 V CEOV Emitter-Base Voltage 4 V EBOI Col

KTC3875TRANSISTOR (NPN) SOT-23 FEATURES High hFE Low noise 1. BASE Complementary to KTA1504 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissip

KTC3876SOT-23 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Complementary to KTA1505 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW

KTC3875 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesHigh hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base V

KTC3876 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-400 Complementary to KTA1505 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Contin

KTC3875COLLECTORPlastic-Encapsulate Transistors3NPN Silicon 1BASE2SOT-23EMITTER(Ta=25 C)MAXIMUM RATINGSRating Symbol ValueUnitCollector-Emitter Voltage VCEO 50 VdcCollector-Base Voltage VCBO60 VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current -Continuous ICmAdc150THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnit(1)Total Device Dissi

KTC3876Plastic-Encapsulate TransistorsNPN Silicon COLLECTOR31BASE2SOT-23EMITTER(Ta=25 C)MAXIMUM RATINGSRating Symbol ValueUnitCollector-Emitter Voltage VCEO 30 VdcCollector-Base Voltage VCBO35 VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current -Continuous ICmAdc500THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitTotal Device Dissipatio

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE 2. EMITTER Low noise 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEB

KTC3875 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Excellent hFE linearity, high hFE, low noise / Applications General amplifier and switching application.

SEMICONDUCTOR KTC3875LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR General purpose application Package:SOT-23 * Complement to KTA1504LT1 * Collector Current :Ic=150mA * low noise:NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage

SMD Type TransistorsNPN TransistorsKTC3875SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High hFE Low noise1 2+0.1+0.05 Complementary to KTA1504 0.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage V

SMD Type TransistorsNPN TransistorsKTC3876 (KTC3876S)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Excellent hFE Linearity Complementary to KTA1505/KTA1505S1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collecto

KTC3875SNPN Silicon Epitaxial Planar Transistor For switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain.1.Base 2.Emitter 3.Collector OSOT-23 Plastic PackageAbsolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter

KTC3875BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to KTA1504 High hFE Low Noise Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Ba