2N5975 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5975
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO126
2N5975 Transistor Equivalent Substitute - Cross-Reference Search
2N5975 Datasheet (PDF)
2n5971.pdf
2N5971Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5972.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2n5973.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2n5970.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2n5972.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
2n5973.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
2n5970.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
